inchange semiconductor isc product specification isc silicon npn power transistors BUS22B/c description high switching speed collector-emitter sustaining voltage- : v ceo(sus) = 400v (min)-BUS22B 450v (min)-bus22c applications designed for use in converters, inverters, switching regulators, motor control systems etc. absolute maximum ratings(t a =25 ) symbol parameter max unit BUS22B 750 v ces collector- emitter voltage(v be = 0) bus22c 850 v BUS22B 400 v ceo collector-emitter voltage bus22c 450 v v ebo emitter-base voltage 9 v i c collector current-continuous 8 a i cm collector current-peak 20 a i b b base current-continuous 4 a i bm base current-peak 6 a p c collector power dissipation @t c =25 125 w t j junction temperature 200 t stg storage temperature range -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.4 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistors BUS22B/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit BUS22B 400 v ceo(sus) collector-emitter sustaining voltage bus22c i c = 0.1a ; i b = 0; l= 25mh 450 v BUS22B i c = 6a; i b = 0.8a b 1.5 v ce(sat) collector-emitter saturation voltage bus22c i c = 6a; i b = 1a b 1.5 v BUS22B i c = 6a; i b = 0.8a b 1.5 v be(sat) base-emitter saturation voltage bus22c i c = 6a; i b = 1a b 1.5 v i ces collector cutoff current v ce =v cesmmax ; v be = 0 1 ma i ebo emitter cutoff current v eb = 9v; i c = 0 10 ma h fe dc current gain i c = 1a ; v ce = 5v 18 switching times , resistive load t on turn-on time 0.5 s t stg storage time 3.0 s t f fall time for BUS22B i c = 6a ;i b1 = -i b2 = 0.8a for bus22c i c = 6a ;i b1 = -i b2 = 1a 0.3 s isc website www.iscsemi.cn
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